Document
Zener Diode
TFZV series
Data Sheet
lApplication Voltage regulation
lDimensions (Unit : mm) lLand Size Figure (Unit : mm)
1.40 0.10
0.17 +0.10 -0.05
1.1
2.00 0.10 2.50 0.20
0.8 0.5 2.0
lFeatures 1) Small power mold type (TUMD2M)
B6
2) High reliability 3) By chip-mounter,
automatic mouting is possible.
lConstruction Silicon epitaxial planar
0~ 0.10
0.80 0.05
+0.20 0.60-0.10
ROHM : TUMD2M
dot (year week factory) + day EX. TFZV3.6B
lTaping Dimensions (Unit : mm)
TUMD2M
lStructure
Cathode Anode
4.0±0.1 2.0±0.05
φ1.15.555±0.01.1 0
0.25±0.05
1.75±0.1
3.5±0.05 2.75
8.0±0.2 2.8±0.05
1.43±0.05
4.0±0.1
φ1.01.0±0.20.2 0
0.9±0.08
lAbsolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power dissipation (*)
P 500 mW
Junction temperature Storage temperature Operating temperature
Tj 150 Tstg -55 to +150 Topr -55 to +150
°C °C °C
(*) Device mounted on glass-epoxy board(50×50mm, t=1.6mm) Solder land (10×10mm)
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1/6
2014.08 - Rev.A
TFZV series
Data Sheet
lElectrical Characteristics (Ta= 25°C)
Symbol
TYP.
Zener voltage : VZ(V)
Dynamic Impedance : Reverse current :
ZZ(W)
IR(mA)
MIN.
MAX. IZ(mA) MAX.
IZ(mA)
MAX.
VR(V)
TFZV 2.0B 2.020 2.200
20
140
20
120 0.5
TFZV 2.2B 2.220 2.410
20
120
20
120 0.7
TFZV 2.4B 2.430 2.630
20
100
20
120 1.0
TFZV 2.7B 2.690 2.910
20
100
20
100 1.0
TFZV 3.0B 3.010 3.220
20
80
20
50 1.0
TFZV 3.3B 3.320 3.530
20
70
20
20 1.0
TFZV 3.6B 3.600 3.845
20
60
20
10 1.0
TFZV 3.9B 3.890 4.160
20
50
20
5 1.0
TFZV 4.3B 4.170 4.430
20
40
20
5 1.0
TFZV 4.7B 4.550 4.800
20
25
20
5 1.0
TFZV 5.1B 4.940 5.200
20
20
20
5 1.5
TFZV 5.6B 5.450 5.730
20
13
20
5 2.5
TFZV 6.2B 5.960 6.270
20
10
20
5 3.0
TFZV 6.8B 6.490 6.830
20
8
20
2 3.5
TFZV 7.5B 7.070 7.450
20
8
20 0.5 4.0
TFZV 8.2B 7.780 8.190
20
8
20 0.5 5.0
TFZV 9.1B 8.570 9.010
20
8
20 0.5 6.0
TFZV 10B
9.410 9.900
20
8
20 0.2 7.0
TFZV 11B 10.500 11.050
10
10
10
0.2 8.0
TFZV 12B 11.440 12.030
10
12
10
0.2 9.0
TFZV 13B 12.550 13.210
10
14
10
0.2
10
TFZV 15B 13.890 14.620
10
16
10
0.2
11
TFZV 16B 15.250 16.040
10
18
10
0.2
12
TFZV 18B 16.820 17.700
10
23
10
0.2
13
TFZV 20B 18.630 19.590
10
28
10
0.2
15
TFZV 22B 20.640 21.710
5
30
5
0.2 17
TFZV 24B 22.610 23.770
5
35
5
0.2 19
TFZV 27B 24.970 26.260
5
45
5
0.2 21
TFZV 30B 27.700 29.130
5
55
5
0.2 23
TFZV 33B 30.320 31.880
5
65
5
0.2 25
TFZV 36B 32.790 34.490
5
75
5
0.2 27
TFZV 39B 35.360 37.190
5
85
5
0.2 30
(1) The zener voltage(VZ) is measured 40ms after power is supplied. (2) The Dynamic Impedance(ZZ) are measured by superimposing a minute alternating current
on the regulated current(IZ)
lMARKING (TYPE NO.)
TYPE TFZV 2.0B TFZV 2.2B TFZV 2.4B TFZV 2.7B TFZV 3.0B TFZV 3.3B TFZV 3.6B TFZV 3.9B TFZV 4.3B TFZV 4.7B TFZV 5.1B TFZV 5.6B TFZV 6.2B TFZV 6.8B TFZV 7.5B TFZV 8.2B
TYPE NO. B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF
TYPE TFZV 9.1B TFZV 10B TFZV 11B TFZV 12B TFZV 13B TFZV 15B TFZV 16B TFZV 18B TFZV 20B TFZV 22B TFZV 24B TFZV 27B TFZV 30B TFZV 33B TFZV 36B TFZV 39B
TYPE NO. BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV
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2/6
2014.08 - Rev.A
TFZV series lElectrical Characteristic Curves
Data Sheet
ZENER CURRENT : IZ(mA)
100
3.6 3.9 4.7
5.6
3.3 4.3 5.1 6.2
6.8 7.5 8.2 9.1 10 11 12 13
3.0 15
2.7
10 2.4 2.2
16 18 20 22
24 27
30
33 36
39
2.0
1
0.1
0.01
0.001 0
5 10 15 20 25 30 35 40
ZENER VOLTAGE : VZ(V) VZ -IZ CHARACTERISTICS
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3/6
2014.08 - Rev.A
TFZV series lElectrical Characteristic Curves
Data Sheet
POWER DISPERSION : Pd(mW)
600
500
400
300
200
100
0 0 50 100 150 200 AMBIENT TEMPERATURE : Ta(°C) Pd-Ta CHARACTERISTICS
REVERS SURGE MAXIMUM POWER : PRSM(W)
10000 1000 100
PRSM
t 1pulse
10
1
0.001
0.01
0.1
1
10
TIME : t(ms) PRSM-TIME CHARACTERISTICS
TEMP.COEFFICIENCE : gZ(mV/°C)
TEMP.COEFFICIENCE : gZ(%/°C)
0.1 0.08 0.06 0.04 0.02
0 -0.02 -0.04 -0.06 -0.08
-0.1 0
40
%/°C
35 30
25
mV/°C
20 15
10
5
0
-5
-10 5 10 15 20 25 30 35 40
ZENER VOLTAGE : VZ(V) gZ -VZ CHARACTERISTICS
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4/6
2014.08 - Rev.A
TFZV10B lElectrical Characteristic Curves
Data Sheet
ZENER CURRENT : IZ(mA)
100 Ta = 25°C
Ta = -25°C 10
1
Ta = 75°C Ta = 125°C
0.1
0.01
0.001 8.5
9 9.5 10 10.5
ZENER VOLTAGE : VZ(V) VZ -IZ CHARACTERISTICS
11
REVERSE CURRENT : IR(pA)
10000 1000
Ta = 125°C
100 Ta = 75°C
10
1
0.1 0
Ta = 25°C
123456 REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
7
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
1000 100
f = 1MHz
10 0
123456
REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
7
ZENER VOLTAGE : VZ(V)
10 Ta=25°C IZ=20mA
9.9 n=30pcs
9.8 AVE. : 9.67V
9.7
9.6
9.5
VZ DISPERSION MAP
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