VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
Base cathode
4, 2
D-PAK (TO-252AA)
1 Anode
3 Anode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM
TJ max. Diode variation
EAS
D-PAK (TO-252AA) 3.0 A
20 V, 30 V, 40 V 0.49 V
20 mA at 125 °C 150 °C
Single die 8 mJ
FEATURES • Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
DESCRIPTION The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform
tp = 5 μs sine 3 Apk, TJ = 125 °C
VALUES 3.0
20 to 40 490 0.49
- 40 to 150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage Maximum working peak reverse voltage
VR VRWM
VS-MBRD320PbF 20
VS-MBRD330PbF 30
VS-MBRD340PbF 40
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle non-repetitive surge current
IFSM
Non-repetitive avalanche energy Repetitive avalanche current
EAS IAR
TEST CONDITIONS
50 % duty cycle at TL = 133 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 1 A, L = 16 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES 3.0 490 75 8.0
1.0
UNITS
A
mJ A
Document Number: 94313 For technical questions within your region, please contact one of the following:
Revision: 14-Jan-11
[email protected],
[email protected],
[email protected]
www.vishay.com 1
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop See fig. 1
VFM (1)
Maximum reverse leakage current See fig. 2
IRM (1)
Typical junction capacitance Typical series inductance Maximum voltage rate of change
CT LS dV/dt
Note (1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
3A TJ = 25 °C
6A
3A TJ = 125 °C
6A
TJ = 25 °C TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP. 0.48 0.58 0.41 0.55 0.02 10.7 189 5.0
-
MAX. 0.6 0.7 0.49
0.625 0.2 20 -
10 000
UNITS
V
mA pF nH V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature range
Maximum storage temperature range Maximum thermal resistance, junction to case
TJ (1) TStg
RthJC
DC operation See fig. 4
Maximum thermal resistance, junction to ambient
RthJA
TEST CONDITIONS
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note (1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES - 40 to 150 - 40 to 175
UNITS °C
6.0 °C/W
80
0.3 g 0.01 oz.
MBRD320 MBRD330 MBRD340
www.vishay.com 2
For technical questions within your region, please contact one of the following: Document Number: 94313
[email protected],
[email protected],
[email protected]
Revision: 14-Jan-11
IF - Instantaneous Forward Current (A)
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Schottky Rectifier, 3.0 A
Vishay Semiconductors
100
10 TJ = 150 °C TJ = 125 °C
1 TJ = 25 °C
0.1 0
0.2 0.4 0.6 0.8 1.0 1.2
VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
IR - Reverse Current (mA)
100
TJ = 150 °C 10
TJ = 125 °C
1 TJ = 100 °C
0.1 TJ = 75 °C TJ = 50 °C
0.01
0.001 0
TJ = 25 °C 5 10 15 20 25 30 35 40
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
TJ = 25 °C 100
CT - Junction Capacitance (pF)
ZthJC - Thermal Impedance (°C/W)
10 0 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1 0.00001
Single pulse (thermal resistance)
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
P DM
t
1
t
2
Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
Document Number: 94313 For technical questions within your region, please contact one of the following:
Revision: 14-Jan-11
[email protected],
[email protected],
[email protected]
www.vishay.com 3
Allowable Case Temperature (°C) IFSM - Non-Repetitive Surge Current (A)
Average Power Loss (W)
VS-MBRD320PbF, VS-MBRD33.