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VS-MBRD320PbF Dataheets PDF



Part Number VS-MBRD320PbF
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-MBRD320PbF DatasheetVS-MBRD320PbF Datasheet (PDF)

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF Vishay Semiconductors Schottky Rectifier, 3.0 A Base cathode 4, 2 D-PAK (TO-252AA) 1 Anode 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS D-PAK (TO-252AA) 3.0 A 20 V, 30 V, 40 V 0.49 V 20 mA at 125 °C 150 °C Single die 8 mJ FEATURES • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability •.

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VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF Vishay Semiconductors Schottky Rectifier, 3.0 A Base cathode 4, 2 D-PAK (TO-252AA) 1 Anode 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS D-PAK (TO-252AA) 3.0 A 20 V, 30 V, 40 V 0.49 V 20 mA at 125 °C 150 °C Single die 8 mJ FEATURES • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 3 Apk, TJ = 125 °C VALUES 3.0 20 to 40 490 0.49 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-MBRD320PbF 20 VS-MBRD330PbF 30 VS-MBRD340PbF 40 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy Repetitive avalanche current EAS IAR TEST CONDITIONS 50 % duty cycle at TL = 133 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 1 A, L = 16 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical VALUES 3.0 490 75 8.0 1.0 UNITS A mJ A Document Number: 94313 For technical questions within your region, please contact one of the following: Revision: 14-Jan-11 [email protected], [email protected], [email protected] www.vishay.com 1 VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF Vishay Semiconductors Schottky Rectifier, 3.0 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop See fig. 1 VFM (1) Maximum reverse leakage current See fig. 2 IRM (1) Typical junction capacitance Typical series inductance Maximum voltage rate of change CT LS dV/dt Note (1) Pulse width < 300 μs, duty cycle < 2 % TEST CONDITIONS 3A TJ = 25 °C 6A 3A TJ = 125 °C 6A TJ = 25 °C TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR TYP. 0.48 0.58 0.41 0.55 0.02 10.7 189 5.0 - MAX. 0.6 0.7 0.49 0.625 0.2 20 - 10 000 UNITS V mA pF nH V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case TJ (1) TStg RthJC DC operation See fig. 4 Maximum thermal resistance, junction to ambient RthJA TEST CONDITIONS Approximate weight Marking device Case style D-PAK (similar to TO-252AA) Note (1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink dTJ RthJA VALUES - 40 to 150 - 40 to 175 UNITS °C 6.0 °C/W 80 0.3 g 0.01 oz. MBRD320 MBRD330 MBRD340 www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 94313 [email protected], [email protected], [email protected] Revision: 14-Jan-11 IF - Instantaneous Forward Current (A) VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF Schottky Rectifier, 3.0 A Vishay Semiconductors 100 10 TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1000 IR - Reverse Current (mA) 100 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C TJ = 50 °C 0.01 0.001 0 TJ = 25 °C 5 10 15 20 25 30 35 40 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage TJ = 25 °C 100 CT - Junction Capacitance (pF) ZthJC - Thermal Impedance (°C/W) 10 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 0.00001 Single pulse (thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 P DM t 1 t 2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 1 Document Number: 94313 For technical questions within your region, please contact one of the following: Revision: 14-Jan-11 [email protected], [email protected], [email protected] www.vishay.com 3 Allowable Case Temperature (°C) IFSM - Non-Repetitive Surge Current (A) Average Power Loss (W) VS-MBRD320PbF, VS-MBRD33.


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