www.vishay.com
VS-6CUT04, VS-6CWT04FN
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 3 A
I-PAK (...
www.vishay.com
VS-6CUT04, VS-6CWT04FN
Vishay Semiconductors
High Performance
Schottky Generation 5.0, 2 x 3 A
I-PAK (TO-251AA)
Base common cathode
4
D-PAK (TO-252AA)
Base common cathode
4
13 Anode 2 Anode
Common cathode
VS-6CUT04
2 1 Common 3 Anode cathode Anode
VS-6CWT04FN
PRODUCT SUMMARY
Package
IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS
D-PAK (TO-252AA), I-PAK (TO-251AA)
2x3A 45 V 0.54 V
3 mA at 125 °C 175 °C
Common cathode 14 mJ
FEATURES 175 °C high performance
Schottky diode Very low forward voltage drop Extremely low reverse leakage Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche
capability RBSOA available Negligible switching losses Submicron trench technology Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Specific for PV cells pybass diode High efficiency SMPS High frequency switching Output rectification Reverse battery protection Freewheeling DC/DC systems Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM VF TJ
3 Apk, TJ = 125 °C (typical, per leg) Range
VALUES 45 0.46
- 55 to 175
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage
SYMBOL VR
TEST CONDITIONS TJ = 25 °C
VS-6CUT04 VS-6CWT04FN
45
UNITS V V °C
UNITS V
Revision: 03-Nov-11
1 Document Number: 94650
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