High Voltage Trench MOS Barrier Schottky Rectifier
Description
V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120S
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF20120S
123
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES Trench MOS Schottky technology ...