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PTVA030121EA

Infineon

Thermally-Enhanced High Power RF LDMOS FET

PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an L...


Infineon

PTVA030121EA

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Description
PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA030121EA Package H-36265-2 Gain (dB) Drain Efficiency (%) CW Power Sweep VDD = 50 V, IDQ = 30 mA, ƒ = 450 MHz 28 26 Gain 24 22 20 18 16 14 31 Efficiency 33 35 37 39 Output Power (dBm) 41 90 80 70 60 50 40 30 3-1 20 43 Features Unmatched input and output Integrated ESD protection Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001) High gain, low thermal resistance Excellent ruggedness Capable of withstanding a 13:1 load mismatch at 50 V, 12 W, CW conditions Pb-free and RoHS compliant RF Characteristics CW Measuremen...




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