Thermally-Enhanced High Power RF LDMOS FET
PTVA030121EA
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz
Description
The PTVA030121EA is an L...
Description
PTVA030121EA
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz
Description
The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA030121EA Package H-36265-2
Gain (dB) Drain Efficiency (%)
CW Power Sweep VDD = 50 V, IDQ = 30 mA, ƒ = 450 MHz
28
26 Gain 24
22
20
18
16
14 31
Efficiency 33 35 37 39
Output Power (dBm)
41
90 80 70 60 50 40 30 3-1 20 43
Features
Unmatched input and output Integrated ESD protection Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001) High gain, low thermal resistance Excellent ruggedness Capable of withstanding a 13:1 load mismatch at
50 V, 12 W, CW conditions Pb-free and RoHS compliant
RF Characteristics
CW Measuremen...
Similar Datasheet