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A1182 Dataheets PDF



Part Number A1182
Manufacturers Toshiba
Logo Toshiba
Description 2SA1182
Datasheet A1182 DatasheetA1182 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • Complementary to 2SC2859. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current I.

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TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • Complementary to 2SC2859. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current IC −500 mA Base current IB −50 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA SC-59 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3F1A operating temperature/current/voltage, etc.) are within the Weight: 0.012 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = −35 V, IE = 0 IEBO VEB = −5 V, IC = 0 hFE (1) (Note) VCE = −1 V, IC = −100 mA hFE (2) (Note) VCE = −6 V, IC = −400 mA VCE (sat) IC = −100 mA, IB = −10 mA VBE VCE = −1 V, IC = −100 mA fT VCE = −6 V, IC = −20 mA Cob VCB = −6 V, IE = 0, f = 1 MHz Min Typ. Max Unit ⎯ ⎯ −0.1 μA ⎯ ⎯ −0.1 μA 70 ⎯ 400 ⎯ 25 ⎯ ⎯ ⎯ −0.1 −0.25 V ⎯ −0.8 −1.0 V ⎯ 200 ⎯ MHz ⎯ 13 ⎯ pF Note: hFE (1) classification O(0): 70 to 140, Y(Y): 120 to 240, hFE (2) classification O: 25 (min), Y: 40 (min), Marking GR(G): 200 to 400 GR: 70 (min) ( ) Marking Symbol ZO Z: Type Name O: hFE Rank 1 Start of commercial production 1982-12 2014-03-01 2SA1182 2 2014-03-01 2SA1182 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions.


MST716A-A A1182 2SA1182-HF


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