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KDV251M Dataheets PDF



Part Number KDV251M
Manufacturers KEC
Logo KEC
Description Silicon Diode
Datasheet KDV251M DatasheetKDV251M Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA VCO FOR C/P, CB PLL FEATURES Low Series Resistance : 0.6 (Max.) High Capacitance Ratio : 1.7(Min.) 2.2(Max.) KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 12 150 -55 150 UNIT V CLASSIFICATION OF CAPACITANCE RATIO GRADE GRADE CAPACITANCE RATIO (C1.6V/C5V) NONE 1.70 2.20 A 1.70 1.82 B 1.80 1.92 C 1.90 2.0.

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SEMICONDUCTOR TECHNICAL DATA VCO FOR C/P, CB PLL FEATURES Low Series Resistance : 0.6 (Max.) High Capacitance Ratio : 1.7(Min.) 2.2(Max.) KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 12 150 -55 150 UNIT V CLASSIFICATION OF CAPACITANCE RATIO GRADE GRADE CAPACITANCE RATIO (C1.6V/C5V) NONE 1.70 2.20 A 1.70 1.82 B 1.80 1.92 C 1.90 2.020 D 2.00 2.12 E 2.10 2.20 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio VR IR C1.6V C5V C1.6V/C5V Series Resistance rS TEST CONDITION IR=10 A VR=9V VR=1.6V, f=1MHz VR=5V, f=1MHz VR=1V, f=50MHz 2002. 6. 25 Revision No : 4 MIN. 12 23 11 1.7 - TYP. - MAX. - 200 38 19 2.2 0.6 UNIT V nA pF pF 1/2 KDV251M/S 2002. 6. 25 Revision No : 4 2/2 .


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