Silicon Diode
SEMICONDUCTOR
TECHNICAL DATA
TV Tuning.
FEATURES High Capacitance Ratio : C2V/C25V=14.5(Min.) Low Series Resistance : rs...
Description
SEMICONDUCTOR
TECHNICAL DATA
TV Tuning.
FEATURES High Capacitance Ratio : C2V/C25V=14.5(Min.) Low Series Resistance : rs=1.1 (Max.) Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
SYMBOL VR Tj Tstg
RATING 32 150
-55 150
UNIT V
KDV300E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK B A
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F
MILLIMETERS 1.60+_ 0.10 1.20+_ 0.10 0.80+_ 0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05
ESC
Marking
Type Name
VC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current Capacitance
IR1 IR2 C2V C25V
VR=30V VR=30V, Ta=60 VR=2V, f=1MHz VR=25V, f=1MHz
Capacitance Ratio
C2V/C25V
-
Series Resistance
rS VR=5V, f=470MHz
Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) 0.02 C(Min.)
(VR=2~25V)
MIN. -
39.5 2.60 14.5
-
TYP. -
MAX. 10 100 47.4 3.03 1.1
UNIT nA pF
2004. 4. 20
Revision No : 0
1/2
REVERSE CURRENT IR (A)
KDV300E
-9
10
-10
10
-11
10
-12
10
-13
10 0
I R - VR
10 20 30 REVERSE VOLTAGE VR (V)
40
TOTAL CAPACITANCE CT (pF)
60 50 40 30 20 10 0
0.5
C T - VR
f=1MHz
1 10 REVERSE VOLTAGE VR (V)
30
1.2 1.0 0.8 0.6 0.4 0.2
0 0.5
r s - VR
f=470MHz
1 10 REVERSE VOLTAGE VR (V)
30
∆(LOG CT) / ∆(LOG VR)
∆(LOG CT) / ∆(LOG VR) - VR
0
-0.5
-1.0
-1.5 0.5
1 10 REVERSE VOLTAGE VR (V)
30
SERIES RESISTANCE rs (Ω)
2004. 4. 20
Revision No : 0
2/2
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