Silicon Diode
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V=2.8 (Min.) Low Series Resis...
Description
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V=2.8 (Min.) Low Series Resistance. : rS=0.5 (max.) Good C-V linearity.
KDV350F
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK 21
CE DF
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperature Range
VR Tj Tstg
RATING 15 150
-55 150
UNIT V
B A
1. ANODE 2. CATHODE
DIM A B C D E F
MILLIMETERS 1.00+_ 0.05
0.80+0.10/-0.05 0.60+_ 0.05 0.30+_ 0.05
0.40 MAX 0.13+_ 0.05
Marking
Type Name
TFSC
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR1 IR2
Capacitance
C1V C4V
Capacitance Ratio
C1V/C4V
Series Resistance
rS
TEST CONDITION VR=15V VR=15V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz
VR=1V, f=470MHz
MIN. -
15.5 5.0 2.8 -
TYP. -
MAX. 10 100 17.0 6.0 0.5
UNIT nA
pF -
2004. 7. 14
Revision No : 0
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REVERSE CURRENT IR (A)
KDV350F
-11
10
IR - VR
10 -12
10 -13 0
4 8 12 REVERSE VOLTAGE VR (V)
16
TOTAL CAPACITANCE CT (pF)
30 25 20 15 10
5 0 0.1
C T - VR
f=1MHz
1.0 REVERSE VOLTAGE VR (V)
10
0.5 0.4 0.3 0.2 0.1
0 0.1
r s - VR
f=470MHz
1.0 REVERSE VOLTAGE VR (V)
10
∆(LOG CT) / ∆(LOG VR)
∆(LOG CT) / ∆(LOG VR) - VR
0
-0.5
-1.0
-1.5 0.1
1.0 REVERSE VOLTAGE VR (V)
10
SERIES RESISTANCE rs (Ω)
2004. 7. 14
Revision No : 0
2/2
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