KDV365F

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. Small Package : TFSC. KDV365F VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 CE DF MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS 1.00+_ 0.05 0.80+0.10/-0.05 0.60+_ 0.05 0.30+_ 0.05 0.40 MAX 0.13+_ 0.05 Marking Type Name TFSC K ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current Capacitance Capacitance Ratio Series Resistance IR1 IR2 C1V C4V C1V/C4V rS ESD Capability * * Failure criterion : IR 20nA at VR=10V. TEST CONDITION VR=10V VR=10V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz VR=4V, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse. MIN. - 27.05 6.05 3.0 - TYP. - MAX. 10 100 28.55 7.55 1.5 UNIT nA pF - 200 - - 2004. 10. 6 Revision No : 0 1/2 REVERSE CURRENT IR (A) TOTAL CAPACITANCE CT (pF) KDV365F -12 10 IR - VR -13 10 0 4 8 12 REVERSE VOLTAGE VR (V) 16 C T - VR 30 f=1MHz 25 20 15 10 5 0 1 10 30 REVERSE VOLTAGE VR (V) 2004. 10. 6 Revision No : 0 2/2 ...