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RFMD2014

RF Micro Devices

DIRECT QUADRATURE MODULATOR

RFMD2014 Direct Quadrature Modulator 1450MHz to 2700MHz RFMD2014 DIRECT QUADRATURE MODULATOR 1450MHz TO 2700MHz Packa...


RF Micro Devices

RFMD2014

File Download Download RFMD2014 Datasheet


Description
RFMD2014 Direct Quadrature Modulator 1450MHz to 2700MHz RFMD2014 DIRECT QUADRATURE MODULATOR 1450MHz TO 2700MHz Package: QFN, 24-Pin, 4mm x 4mm VCC1 GND IN IP GND GND Features  ACPR Performance: -70dBc Typ. for 1-Carrier WCDMA  Very High Linearity: +26dBm OIP3  Very Low Noise Floor: -160 dBm/Hz  High Output Power: +11dBm P1dB  Typical Carrier Feed-Through: <-40 dBm  Single-Ended or Differential LO Drive  Typical Sideband Suppression: <-40 dBc  Single +5V Supply  Small 24-Pin, 4mmx4mm, QFN Applications  Cellular, 3G Infrastructure  WiBro, WiMax, LTE  WiFI or WLL Systems  GMSK, QPSK, DQPSK, QAM Modulation 24 23 22 21 20 19 NC 1 18 VCC2 GND 2 17 GND LOP 3 LON 4 -45° +45° ` 16 RFOUT 15 NC GND 5 14 GND NC 6 13 NC 7 8 9 10 11 12 NC GND QN QP GND GND Functional Block Diagram Product Description The RFMD2014 is direct quadrature modulator for use in cellular base stations and other communications systems. RFMD2014 supports cellular, 3G, WiMax, and LTE air interface standards. This device features operation from 1450MHz to 2700MHz with excellent carrier and sideband suppression and ultra low noise floor. The device is manufactured in an advanced GaAs HBT process. The RFMD2014 operates from a single 5V supply and is packaged in a low cost, 4mm x 4mm, 24-pin leadless package. DS111121 Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEV...




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