BAT63-07W

Silicon Schottky Diode Low barrier diode for detectors up to GHz frequencies For high-speed applications Zero bias detector diode Pb-free (RoHS compliant) package BAT63... BAT63-02V  BAT63-07W "! , ,  ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BAT63-02V BAT63-07W Package SC79 SOT343 Configuration single parallel pair LS(nH) 0.6 1.6 Marking d 63s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Total power dissipation TS ≤ 120°C, BAT63-02V TS ≤ 114°C, BAT63-07W Junction temperature Storage temperature VR IF Ptot Tj Tstg Value 3 100 100 100 150 -55 ... 150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point1) BAT63-02V BAT63-07W Symbol RthJS 1 Value ≤ 295 ≤ 355 Unit K/W 2011-06-15 BAT63... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 3 V Forward voltage IF = 1 mA Forward voltage matching2) IF = 1 mA IR VF ∆ VF - - 10 - 190 300 - - 20 AC Characteristics Diode capacitance VR = 0.2 V, f = 1 MHz Differential resistance VR = 0 , f = 10 kHz CT - 0.65 0.85 R0 - 30 - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2∆VF is the difference between lowest and highest VF in a multiple diode component. Unit µA mV pF kΩ 2 2011-06-15 IF CT IF IF BAT63... Diode capacitance CT = ƒ (VR) f = 1MHz ...