TVS Diode Array
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES 350 Watts peak pulse power (tp=8/...
Description
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES 350 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 15A(tp=8/20 s) Standard SOT-23 Package. Protects one Bidirectional line or two Unidirectional Lines. Low clamping voltage. Low leakage current.
APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Industrial Controls. Personal digital assistants (PDA s) Notebooks, desktops PC, & servers. Portable instrumentation. Set-Top Box, DVD Player.
PG12GCS23
TVS Diode Array for ESD Protection in Portable Electronics
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. ANODE 1 2. ANODE 2 3. CATHODE
SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature
PPK IPP Tj
Storage Temperature
Tstg
RATING 350 15
-55 150 -55 150
UNIT W A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage
VRWM VBR IR VC
Junction Capacitance
CJ
TEST CONDITION
It=1mA VRWM=12V IPP=15A, tp=8/20 s VR=0V, f=1MHz Pin 3 to 1 and Pin 3 to 2
MIN. -
1...
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