PG05HXTS6

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 350 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 24A(tp=8/20 s) Unidirectional protection of five I/O lines. Low clamping voltage. Low operating and leakage current. Small package for use in portable electronics. APPLICATIONS Cell phone handsets and accessories. Cordless Phones. Personal digital assistants (PDA s) Notebooks, desktops PC & servers. Portable instrumentation. Set-Top Bosx, DVD Player. Digital Camera. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature Storage Temperature SYMBOL PPK IPP Tj Tstg RATING 350 24 -55 150 -55 150 UNIT W A PG05HXTS6 TVS Diode Array for ESD Protection in Portable Electronics ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current VRWM VBR IR Clamping Voltage VC Junction Capacitance CJ TEST CONDITION It=1mA VRWM=5V IPP=5A, tp=8/20 s IPP=24A, tp=8/20 s VR=0V, f=1MHz Between I/O Pins and GND 2003. 7. 10 Revision No : 0 MIN. 6 - TYP. - MAX. 5 20 9.8 14.5 UNIT V V A V - 325 400 pF 1/2 PG05HXTS6 2003. 7. 10 Revision No : 0 2/2 ...