TVS Diode
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG05FSUL2
Single Line TVS Diode for ESD P...
Description
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG05FSUL2
Single Line TVS Diode for ESD Protection in Portable Electronics
FEATURES 100 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 10A(tp=8/20 s) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. (* Multi-Layer Varistors [0402 Size]) Protects on I/O or power line. Low clamping voltage. Low leakage current.
APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Junction Temperature Storage Temperature
SYMBOL PPK IPP Tj Tstg
RATING 100 10
-55 150 -55 150
UNIT W A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
VRWM
Reverse Breakdown Voltage
VBR
Reverse Leakage Current
IR
Forward Current
VF
Clamping Voltage
VC
Junction Capacitance
CJ
TEST CONDITION -
It=1mA VRWM=3V VRWM=5V IF=10mA IPP=5A, tp=8/20 s IPP=10A, tp=8/20 s VR=0V, f=1MHz
MIN. 6 -
TYP. 0.8 -
MAX. 5 0.1 5 9.8
10.0 80
UNIT V V
A V V
pF
2008. 3. 25
Revision No : 1
1/2
PG05FSUL2
2008. 3. 25
Revision No : 1
2/2
...
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