PG05DXTE6

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 30 Watts peak pulse power (tp=8/20 )s Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current. A A1 CC PG05DXTE6 TVS Diode for ESD Protection in Portable Electronics B B1 1 6 DIM MILLIMETERS A 1.6+_ 0.05 A1 1.0 +_ 0.05 2 5 B 1.6+_ 0.05 B1 1.2 +_ 0.05 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 J 0.12+_ 0.05 PP P5 JD H APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. MAXIMUM RATING (Ta=25) CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Junction Temperature Storage Temperature SYMBOL PPK Tj Tstg RATING 30 150 -55 150 UNIT W 1. (TVS) D1 CATHODE 2. COMMON ANODE 3. (TVS) D2 CATHODE 4. (TVS) D3 CATHODE 5. N. C. 6. (TVS) D4 CATHODE TES6 Marking 65 4 Type Name 5D 1 23 654 D4 D3 D1 D2 123 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current VRWM VBR IR Junction Capacitance CJ TEST CONDITION - It=1mA VRWM=3V VR=0V, f=1MHz MIN. 6.1 - TYP. - MAX. 5 7.2 0.5 15 UNIT V V A pF 2009. 9. 1 Revision No : 4 1/2 PEAK PULSE POWER PPP (W)...