PG05BSESC

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES hTransient voltage protection for data lines. hIEC61000-4-2(ESD) 15kV(Air), 8kV(Contact). hSmall package for portable electronics. hSuitable replacement for Varistors in ESD protection applications. hProtects one I/O or power line. hLow clamping voltage. hLow leakage current. hSuffix U : Qualified to AEC-Q101. ex) PG05BSESC-RTK/HU APPLICATIONS hCell phone handsets and accessories. hMicroprocessor based equipment. hPersonal digital assistants (PDA’s). hNotebooks, desktops, & servers. hPortable instrument hPagers peripherals. CATHODE MARK B A PG05BSESC TVS Diode for ESD Protection in Portable Electronics C 1 2 D 1. ANODE 2. CATHODE E G G F DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10 ESC MAXIMUM RATING (Ta=25) CHARACTERISTIC Peak Pulse Power (tp=8/20ɫ) Peak Pulse Current (tp=8/20ɫ) Junction Temperature Storage Temperature SYMBOL PPK IPP Tj Tstg RATING 30 1.6 150 -55q150 UNIT W A   Marking Type Name D2 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current VRWM VBR IR Claming Voltage VC Series Resistance RS Junction Capacitance CJ TEST CONDITION - It=5mA VRWM=3.5V IPP=1A, tp=8/20ɫ IPP=1.6A, tp=8/20ɫ VR=1V, f=900MHz VR=0V, f=1MHz 2018. 04. 10 Revision No : 3 MIN. - 6.65 - TYP. - MAX. 5 7.45 0.5 12 18 60 5.0 UNI...