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PBHV2160Z Dataheets PDF



Part Number PBHV2160Z
Manufacturers NXP
Logo NXP
Description NPN high-voltage low VCEsat (BISS) transistor
Datasheet PBHV2160Z DatasheetPBHV2160Z Datasheet (PDF)

SOT223 PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC 3. Applications • Electron.

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SOT223 PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC 3. Applications • Electronic ballast for fluorecent lighting • LED driver for LED chain module • LCD backlighting • HID front lighting • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC Quick reference data Parameter collector-emitter voltage collector current Conditions open base Min Typ Max Unit - - 600 V - - 0.1 A Scan or click this QR code to view the latest information for this product NXP Semiconductors PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline 4 123 SC-73 (SOT223) Graphic symbol 2, 4 1 3 sym016 6. Ordering information Table 3. Ordering information Type number Package Name PBHV2160Z SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 7. Marking Table 4. Marking codes Type number PBHV2160Z Marking code HV216Z PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 13 NXP Semiconductors PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base VCESM collector-emitter peak voltage VBE = 0 V VEBO emitter-base voltage open collector IC collector current Ptot total power dissipation Tamb ≤ 25 °C Tj Tamb Tstg junction temperature ambient temperature storage temperature Min Max Unit - 600 V - 600 V - 600 V - 6V - 0.1 A [1] - 0.65 W [2] - 1.4 W - 150 °C -55 150 °C -65 150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 1.6 Ptot (W) 1.2 (1) aaa-013425 0.8 (2) 0.4 0 -60 20 Fig. 1. (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, standard footprint Power derating curves 100 180 Tamb (°C) PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers. 24 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 13 NXP Semiconductors PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Min Typ Max Unit [1] - - 190 K/W [2] - - 89 K/W - - 20 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.1 10 0.5 0.2 0.05 0.02 0.01 10 aaa-013426 10-1 10-5 10-4 10-3 10-2 10-1 1 FR4 PCB, single-sided copper, tin-plated and standard footprint. 10 102 103 tp (s) Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 Zth(j-a) (K/W) 10 0.75 0.33 0.1 duty cycle = 1 0.5 0.2 0.05 aaa-013427 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 102 103 tp (s) Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV2160Z All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 24 June 2015 4 / 13 NXP Semiconductors PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 10. Characteristics Table 7. Symbol ICBO ICES IEBO hFE VCEsat VBEsat Cc Ce Characteristics Parameter Conditions collector-base cut-off current VCB = 400 V; IE = 0 A; Tamb = 25 °C VCB = 400 V; IE = 0 A; Tj = 150 °C collector-emitter cut-off VCE = 400 V; VBE = 0 V; Tamb = 25 °C current emitter-base cut-off current VEB = 4.8 V; IC = 0 A; Tamb = 25 °C DC current gain VCE = 10 V; IC = 10 mA; Tamb = 25 °C collector-emitter saturation voltage IC = 30 mA; IB = 6 mA; Tamb = 25 °C base-emitter saturation IC = 50 mA; IB = 5 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tam.


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