Document
SOT223
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
24 June 2015
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV3160Z
2. Features and benefits
• Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC
3. Applications
• Electronic ballast for fluorecent lighting • LED driver for LED chain module • LCD backlighting • HID front lighting • Hook switch for wired telecom • Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Symbol VCEO
IC
Quick reference data Parameter
collector-emitter voltage
collector current
Conditions open base
Min Typ Max Unit - - 600 V
- - 0.1 A
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NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
2, 4
1
3 sym016
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBHV2160Z
SC-73
Description
plastic surface-mounted package with increased heatsink; 4 leads
Version SOT223
7. Marking
Table 4. Marking codes Type number PBHV2160Z
Marking code HV216Z
PBHV2160Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 13
NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VCESM
collector-emitter peak voltage VBE = 0 V
VEBO
emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj Tamb Tstg
junction temperature ambient temperature storage temperature
Min Max Unit - 600 V
- 600 V
- 600 V
- 6V
- 0.1 A
[1] -
0.65 W
[2] -
1.4 W
- 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
1.6 Ptot (W)
1.2
(1)
aaa-013425
0.8
(2)
0.4
0 -60 20
Fig. 1.
(1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, standard footprint
Power derating curves
100 180 Tamb (°C)
PBHV2160Z
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 13
NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
9. Thermal characteristics
Table 6. Symbol Rth(j-a)
Rth(j-sp)
Thermal characteristics Parameter
Conditions
thermal resistance from junction to ambient
in free air
thermal resistance from junction to solder point
Min Typ Max Unit [1] - - 190 K/W [2] - - 89 K/W
- - 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
103
Zth(j-a) (K/W) duty cycle = 1
102 0.75 0.33
0.1 10
0.5 0.2
0.05
0.02 0.01
10
aaa-013426
10-1 10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, single-sided copper, tin-plated and standard footprint.
10 102 103 tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102 Zth(j-a) (K/W)
10
0.75 0.33
0.1
duty cycle = 1 0.5 0.2
0.05
aaa-013427
0.02 0.01
1 0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
102 103 tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV2160Z
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
24 June 2015
4 / 13
NXP Semiconductors
PBHV2160Z
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
10. Characteristics
Table 7. Symbol ICBO
ICES IEBO hFE VCEsat VBEsat
Cc
Ce
Characteristics Parameter
Conditions
collector-base cut-off current
VCB = 400 V; IE = 0 A; Tamb = 25 °C VCB = 400 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = 400 V; VBE = 0 V; Tamb = 25 °C current
emitter-base cut-off current
VEB = 4.8 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = 10 V; IC = 10 mA; Tamb = 25 °C
collector-emitter saturation voltage
IC = 30 mA; IB = 6 mA; Tamb = 25 °C
base-emitter saturation IC = 50 mA; IB = 5 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tam.