ON5088

ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits  Low noise high gain microwave transistor  High maximum stable gain 27 dB at 1.8 GHz  110 GHz fT silicon germanium technology 1.3 Applications  2nd and 3rd LNA stage in DBS LNBs  Satellite radio  Low noise amplifiers for microwave communications systems  WLAN and WiMAX applications  Analog/digital cordless applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCB collector-base voltage VCE collector-emitter voltage VEB IC Ptot hFE CCBS emitter-base voltage collector current total power dissipation DC current gain collector-base capacitance Conditions open emitter open base shorted base open collector Tsp  90 C IC = 10 mA; VCE = 2 V; Tj = 25 C VCB = 2 V; f = 1 MHz Min Typ -- -- -- -- - 25 [1] - - 160 280 Max 10 3.0 10 1.0 40 136 400 Unit V V V V mA mW - 70 - fF NXP Semiconductors ON5088 NPN wideband silicon germanium RF transistor Table 1. Quick reference data …continued Symbol P...