DatasheetsPDF.com

IRFI530NPBF

International Rectifier
Part Number IRFI530NPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 24, 2016
Detailed Description HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Le...
Datasheet PDF File IRFI530NPBF PDF File

IRFI530NPBF
IRFI530NPBF


Overview
HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.
5KVRMS … l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The mou...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)