Power MOSFET
VDSS RDS(on) max Qg (typical)
RG (typical)
ID (@TC (Bottom) = 25°C)
30 1.10 58 1.0
100
V m nC Ω
A
Applications ...
Description
VDSS RDS(on) max Qg (typical)
RG (typical)
ID (@TC (Bottom) = 25°C)
30 1.10 58 1.0
100
V m nC Ω
A
Applications Control MOSFET for synchronous buck converter
StrongIRFET™ IRFH8303PbF
HEXFET® Power MOSFET
PQFN 5 x 6 mm
Features Low RDS(ON) (≤ 1.10 m) Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg Tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification
Benefits Lower Conduction Losses Enable better Thermal Dissipation Increased Reliability results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number
Package Type
IRFH8303PbF
PQFN 5 mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFH8303TRPbF
Absolute Maximum Ratings
VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C
ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
TJ TSTG
Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max. ± 20 43 280 177
100
400 3.7 156 0.029 -55 to + 150
Units V
A
W W/°C
°C
Notes through are on page 9 1 www.irf.com © 201...
Similar Datasheet