BUJD203AX
NPN power transistor with integrated diode
Rev. 01 — 27 September 2010
Product data sheet
1. Product profi...
BUJD203AX
NPN power
transistor with integrated diode
Rev. 01 — 27 September 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated
NPN power switching
transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package.
1.2 Features and benefits
Fast switching High voltage capability Integrated anti-parallel E-C diode
Isolated package
Very low switching and conduction losses
1.3 Applications
DC-to-DC converters Electronic lighting ballasts
Inverters Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC collector current see Figure 1; see Figure 2; DC; see Figure 4
Ptot total power Th ≤ 25 °C; see Figure 3 dissipation
VCESM
collector-emitter peak voltage
VBE = 0 V
Static characteristics
hFE VCEOsus
DC current gain
collector-emitter sustaining voltage
IC = 500 mA; VCE = 5 V; see Figure 11; Th = 25 °C
VCE = 5 V; IC = 3 A; see Figure 11; Th = 25 °C
IB = 0 A; LC = 25 mH; IC = 10 mA; see Figure 6; see Figure 7
Min Typ Max Unit - - 4A
- - 26 W
- - 850 V
13 21 32
- 12.5 -
400 450 -
V
NXP Semiconductors
BUJD203AX
NPN power
transistor with integrated diode
2. Pinning information
Table 2. Pin 1 2 3 mb
Pinning information Symbol Description B base C collector E emitter n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
C
B
E sym131
3. Ordering information
123
SOT186A (TO-220F)
Tabl...