AUIRFN7110

  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. Applications  Injection  DC-DC Converter  Automotive Lighting  E-Horn  48V Automotive Systems VDSS RDS(on) typ. max ID (Silicon Limited) G Gate AUIRFN7110 HEXFET® POWER MOSFET 100V 11.5m 14.5m 58A   PQFN 5X6 mm D Drain S Source Base Part Number   AUIRFN7110 Package Type   PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number   AUIRFN7110TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability...