Power MOSFET
AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature ...
Description
AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
Applications Injection DC-DC Converter Automotive Lighting E-Horn 48V Automotive Systems
VDSS RDS(on) typ.
max ID (Silicon Limited)
G Gate
AUIRFN7110
HEXFET® POWER MOSFET
100V 11.5m 14.5m
58A
PQFN 5X6 mm
D Drain
S Source
Base Part Number AUIRFN7110
Package Type PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number AUIRFN7110TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability...
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