SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast sw...
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and switching mode power supplies.
FEATURES
VDSS(Min.)= 400V, ID= 6.5A Drain-Source ON Resistance : RDS(ON)=0.83 Qg(typ.) =13 nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
TC=25 Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
SYMBOL VDSS VGSS
ID
IDP EAS EAR dv/dt
PD
Tj Tstg
RATING 400 30 6.5 4.1 18* 140
3.9
4.5 78 0.63 150 -55 150
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-toAmbient
RthJC RthJA
1.6 110
* : Drain current limited by maximum junction temperature.
UNIT V V
A
mJ mJ V/ns W W/
/W /W
KF9N40D
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE 2. DRAIN 3. SOURCE
DPAK (1)
PIN CONNECTION
D
G S
2013. 8. 30
Revision No : 0
1/6
KF9N40D
ELECTRICAL CHARACTERISTICS (Tc...