KF5N53FS

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 525V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.5 Qg(typ) = 12nC trr(typ) = 150ns @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 525 30 5.0* 2.9* 13* 270 8.6 20 37.9 0.30 150 -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 3.3 62.5 * : Drain current limited by maximum junction temperature. PIN CONNECTION UNIT V V A mJ mJ V/ns W W/ /W /W KF5N53FS N CHANNEL MOS FIELD EFFECT TRANSISTOR 2012. 3. 29 Revision No : 0 1/6 KF5N53FS ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V Breakdown Voltage Temperature Coefficient Drain Cut-off Current BVDSS/ Tj ID=250 , Referenced to 25 IDSS VDS=525V, VGS=0V, Gate Thr...