SEMICONDUCTOR
TECHNICAL DATA
KF4N60F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MOS...
SEMICONDUCTOR
TECHNICAL DATA
KF4N60F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 600V, ID= 4A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID IDP EAS EAR dv/dt
Drain Power Dissipation
Tc=25 Derate above 25
PD
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-toAmbient
RthJC RthJA
RATING 600 30 4* 2.4* 12* 130
3.3
4.5 37.9 0.3 150 -55 150
3.3 62.5
* : Drain current limited by maximum junction temperature.
UNIT V V
A
mJ mJ V/ns W W/
/W /W
Q
AC
F O
E
G B
K
LM
D NN
J
R H
123
1. GATE 2. DRAIN 3. SOURCE
* Single Gauge Lead Frame
DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2
TO-220IS (1)
PIN CONNECTION
D
G S
2013. 6. 03
Revisi...