KF1N60L

SEMICONDUCTOR TECHNICAL DATA KF1N60L N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 0.5A RDS(ON)=10 (Max) @VGS = 10V Qg(typ) = 4.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS TC=25 Drain Current TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25 Derate above 25 Ta=25 ID IDP EAS EAR dv/dt PD Maximum Junction Temperature Tj Storage Temperature Range Thermal Characteristics Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 600 30 0.5 0.31 2.0 45 1.3 4.5 5.4 0.043 1 150 -55 150 23 125 UNIT V V A mJ mJ V/ns W W/ W /W /W O D BD P DEPTH:0.2 C Q K FF HH M EM 123 HL G JA R DIM MILLIMETERS A 7.20 MAX B 5.20 MAX C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 S G 1.70 MAX H 0.55 MAX J 14.00+_ 0.50 K 0.35 MIN L 0.75+_ 0.10 M4 N HO P 25 1.25 Φ1.50 Q 0.10 MAX R 12.50 +_ 0.50 S 1.00 NN 1. GATE 2. DRAIN 3. SOURCE TO-92L PIN CONNECTION D G S 2013. 1. 14 Revision No : 0 1/7 KF1N60L ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC Static Drain-Source Breakdown Voltage Breakdown Volta...