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IRF8910PBF-1

International Rectifier

Power MOSFET

VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 20 13.4 18.3 7.4 10 V mΩ nC A Fea...


International Rectifier

IRF8910PBF-1

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Description
VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 20 13.4 18.3 7.4 10 V mΩ nC A Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF8910PbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF8910PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF8910PbF-1 IRF8910TRPbF-1 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Notes  through … are on page 10 Max. 20 ± 20 10 8.3 82 2.0 1.3 0.016 -55 to + 150 Units V A W W/°C °C Typ. ––– ––– Max. 42 62.5 Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF8910PbF-1 Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td...




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