Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical) ID
(@TA = 25°C)
20 13.4
18.3 7.4 10
V
mΩ
nC A
Fea...
Description
VDS RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical) ID
(@TA = 25°C)
20 13.4
18.3 7.4 10
V
mΩ
nC A
Features Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRF8910PbF-1
HEXFET® Power MOSFET
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
SO-8
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF8910PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF8910PbF-1 IRF8910TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter RθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 10
Max. 20 ± 20 10 8.3 82 2.0 1.3
0.016 -55 to + 150
Units V
A W
W/°C °C
Typ. ––– –––
Max. 42 62.5
Units °C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 30, 2014
IRF8910PbF-1
Static @ TJ = 25°C (unless otherwise specified)
BVDSS ΔΒVDSS/ΔTJ RDS(on)
VGS(th) ΔVGS(th)/ΔTJ IDSS
IGSS
gfs Qg
Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td...
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