IRF8788PBF-1

VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 30 V 2.8 mΩ 3.8 44 nC 24 A Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF8788PbF-1 HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF8788PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF8788PbF-1 IRF8788TRPbF-1 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Notes  through … are on page 9 Max. 30 ±20 24 19 190 2.5 1.6 0.02 -55 to + 150 Typ. ––– ––– Max. 20 50 Units V A W W/°C °C Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 23, 2014 IRF8788PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ΔΒVDSS/ΔTJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp...