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BFU910F

Part Number	BFU910F
Manufacturer	NXP
Description	NPN wideband silicon germanium RF transistor
Published	Mar 23, 2016
Detailed Description	BFU910F NPN wideband silicon germanium RF transistor Rev. 2 — 16 January 2015 Product data sheet 1. Product profile ...
Datasheet	BFU910F PDF File

Overview

BFU910F NPN wideband silicon germanium RF transistor Rev.
2 — 16 January 2015 Product data sheet 1.
Product profile 1.
1 General description NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
The BFU910F is suitable for small signal applications up to 20 GHz.
1.
2 Features and benefits  Low noise high gain microwave transistor  Minimum noise figure (NFmin) = 0.
65 dB at 12 GHz  Maximum stable gain 14.
2 dB at 12 GHz  90 GHz fT SiGe technology 1.
3 Applications  Ku band DBS Low-Noise blocks 1.
4 Quick reference data Table 1.
Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditio...

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BFU910F NPN wideband silicon germanium RF transistor - NXP

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