627
BFU580Q
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 Ge...
627
BFU580Q
NPN wideband silicon RF
transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave
transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package.
The BFU580Q is part of the BFU5 family of
transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high linearity, high breakdown RF
transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.75 dB at 900 MHz Maximum stable gain 14 dB at 900 MHz 11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise, high linearity amplifiers for ISM applications Automotive applications (e.g., antenna amplifiers)
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 120 C
hFE DC current gain
IC = 30 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 30 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 30 60 mA
[1] -
-
1000 mW
60 95 130
- 1.1 -
pF
- 10.5 -
GHz
NXP Semiconductors
BFU580Q
NPN wideband silicon RF tr...