627
BFU580G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 G...
627
BFU580G
NPN wideband silicon RF
transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave
transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.
The BFU580G is part of the BFU5 family of
transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high linearity, high breakdown RF
transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.75 dB at 900 MHz Maximum stable gain 15.5 dB at 900 MHz 11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise, high linearity amplifiers for ISM applications Automotive applications (e.g., antenna amplifiers)
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 120 C
hFE DC current gain
IC = 30 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 30 mA; VCE = 8 V; f = 900 MHz
Min Typ
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- 30
[1] -
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60 95
- 1.1
- 11
Max Unit 24 V 12 V 24 V 2V 60 mA 1000 mW 130 - pF - GHz
NXP Semiconductors
BFU580G
NPN wideband silicon RF transi...