BFU550X

SOT143B BFU550X NPN wideband silicon RF transistor Rev. 2 — 12 April 2019 Product data sheet 1 Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package. The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.75 dB at 900 MHz Maximum stable gain 21.5 dB at 900 MHz 11 GHz fT silicon technology 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp ≤ 87 °C hFE DC current gain IC = 15 mA; VCE = 8 V Cc collector capacitance VCB = 8 V; f = 1 MHz fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz Min Typ Max Unit -- 24 V -- 12 V -- 24 V -- 2V - 15 50 mA [1] - - 450 mW 60 95 200 - 0.72 - pF - 11 - GHz NXP Semiconductors BFU550X NPN wideband silicon RF transistor Symbol Gp(max) NFmin PL(1dB) Parameter maximu...