STF10N80K5

STF10N80K5 N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS STF10N80K5 800 V RDS(on) max 0.600 Ω ID PTOT 9 A 30 W 3 2 1 TO-220FP Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Industry’s best RDS(on) Industry’s best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STF10N80K5 Table 1. Device summary Marking Package 10N80K5 TO-220FP Packaging Tube November 2014 This is information on a product in full production. DocID026564 Rev 4 1/14 www.st.com Contents Contents STF10N80K5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . ....