STAC9200
Datasheet
200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package
1 1
2 3
3
STAC780-4B
Pin connection ...
STAC9200
Datasheet
200 W, 32 V HF to 1.3 GHz LDMOS
transistor in a STAC package
1 1
2 3
3
STAC780-4B
Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate
Features
Order code STAC9200
Frequency 860 MHz
VDD 32 V
POUT 200 W
Gain 16 dB
Efficiency 60 %
Improved ruggedness: V(BR)DSS > 80 V Load mismatch 65:1 all phases at 200 W, 32 V, 860 MHz, PW 1ms, DC = 10% POUT = 200 W min. (230 W typ.) with 16 dB gain at 860 MHz In compliance with the 2002/95/EC European directive ST air-cavity STAC packaging technology
Description
The STAC9200 is a common source N-channel enhancement-mode lateral fieldeffect RF power
transistor designed for broadband applications in the HF to 1300 MHz frequency range. The STAC9200 benefits from the latest generation of efficient STAC package technology.
Product status link STAC9200
Product summary
Order code
STAC9200
Marking
STAC9200
Package
STAC780-4B
Packing
Box
DS9997 - Rev 4 - March 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
STAC9200
Electrical data
1 Electrical data
Symbol V(BR)DSS
VGS TJ TSTG
Table 1. Absolute maximum ratings
Parameter Drain source voltage (TCASE = 25 °C) Gate-source voltage (TCASE = 25 °C) Maximum operating junction temperature Storage temperature range
Value 80 ±20 200
-65 to +150
Unit V V °C °C
Symbol RthJC
Table 2. Thermal data Parameter Junction-case thermal resistance
Value 0.525
Unit °C/W
Symbol HBM
Table 3. ESD protecti...