NTP75N03-06

NTP75N03−06, NTB75N03−06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The Drain−to−Source Diode has a fast response with soft recovery. Features Ultra−Low RDS(on), Single Base, Advanced Technology SPICE Parameters Available Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatures High Avalanche Energy Capability ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0 Pb−Free Packages are Available Typical Applications Power Supplies Inductive Loads PWM Motor Controls Replaces MTP1306 and MTB1306 N−Channel D G S http://onsemi.com V(BR)DSS 30 V RDS(on) TYP 5.3 mW @ 10 V ID MAX 75 A 4 4 1 2 3 TO−220AB CASE 221A STYLE 5 2 1 3 D2PAK CASE 418AA STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain 75N 03−06G AYWW 1 Gate 3 Source 2 Drain 75N 03−06G AYWW 1 Gate 2 Drain 3 Source N75N03−06 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2005 1 August, 2005 − Rev. 6 Publication Order Number: NTP75N03−06/D NTP75N03−06, NTB75N03−06 M...