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STL4N80K5

STMicroelectronics

N-CHANNEL POWER MOSFET

STL4N80K5 N-channel 800 V, 2.1 Ω typ., 2.5 A MDMesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − produc...


STMicroelectronics

STL4N80K5

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Description
STL4N80K5 N-channel 800 V, 2.1 Ω typ., 2.5 A MDMesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data 1 2 3 4 PowerFLAT™ 5x6 VHV Features Order code STL4N80K5 VDS 800 V RDS(on)max. 2.5 Ω Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener protected ID 2.5 A Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v1 Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STL4N80K5 Table 1. Device summary Marking Package 4N80K5 PowerFLAT™ 5x6 VHV Packaging Tape and reel May 2015 This is information on a product in full production. DocID025574 Rev 2 1/17 www.st.com Contents Contents STL4N80K5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 P...




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