N-CHANNEL POWER MOSFET
STL4N80K5
N-channel 800 V, 2.1 Ω typ., 2.5 A MDMesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package
Datasheet − produc...
Description
STL4N80K5
N-channel 800 V, 2.1 Ω typ., 2.5 A MDMesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package
Datasheet − production data
1 2 3 4
PowerFLAT™ 5x6 VHV
Features
Order code STL4N80K5
VDS 800 V
RDS(on)max. 2.5 Ω
Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener protected
ID 2.5 A
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34 Top View
AM15540v1
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STL4N80K5
Table 1. Device summary
Marking
Package
4N80K5
PowerFLAT™ 5x6 VHV
Packaging Tape and reel
May 2015
This is information on a product in full production.
DocID025574 Rev 2
1/17
www.st.com
Contents
Contents
STL4N80K5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 P...
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