Document
STH170N8F7-2
N-channel 80 V, 0.0028 Ω typ., 120 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package
Datasheet — production data
TAB
2 3
1
H2PAK-2
Features
Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W
• Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness
Figure 1. Internal schematic diagram
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Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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Order code STH170N8F7-2
Table 1. Device summary
Marking
Package
170N8F7
H2PAK-2
Packaging Tape and reel
February 2015
This is information on a product in full production.
DocID026382 Rev 2
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www.st.com
Contents
Contents
STH170N8F7-2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STH170N8F7-2
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VDS Drain-source voltage
VGS Gate-source voltage ID(1) Drain current (continuous) ID(1) Drain current (continuous) at TC = 100 °C
IDM PTOT(1)
Drain current (pulsed) Total dissipation at TC = 25 °C
TJ Operating junction temperature
Tstg Storage temperature
1. Limited by package and rated according to Rthj-c.
80 ± 20 120 120 480 250
-55 to 175
Unit
V V A A A W °C °C
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case Rthj-pcb(1) Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch2, 2oz Cu.
Value 0.6 35
Unit °C/W °C/W
Table 4. Avalanche data
Symbol
Parameter
Not-repetitive avalanche current, IAV (pulse width limited by Tjmax)
Single pulse avalanche energy EAS (starting TJ = 25 °C, ID = IAV, VDD = 50 V)
Value 35 615
Unit A mJ
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Electrical characteristics
2 Electrical characteristics
STH170N8F7-2
(TCASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On/off states Test conditions
V(BR)DSS
Drain-source breakdown voltage
VGS= 0, ID = 250 µA
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage drain current
Gate body leakage current Gate threshold voltage Static drain-source on- resistance
VGS = 0, VDS = 80 V VGS = 0, VDS = 80 V, TC=125 °C VDS = 0, VGS = +20 V VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 60 A
Min. Typ. Max. Unit 80 V
1 µA 100 µA 100 nA 2.5 4.5 V 0.0028 0.0037 Ω
Symbol
Parameter
Ciss Coss
Crss
Qg Qgs Qgd
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge
Table 6. Dynamic Test conditions
VGS=0, VDS =40 V, f=1 MHz,
VDD=40 V, ID = 120 A VGS =10 V Figure 14
Min. Typ. Max. Unit
- 8710 - 1330
-
pF pF
- 78 - pF
- 120 - nC - 43 - nC - 26 - nC
Symbol
Parameter
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
Table 7. Switching times Test conditions
VDD= 40 V, ID= 60 A, RG= 4.7 Ω, VGS= 10 V Figure 13
Min. -
Typ. 38 53 79 37
Max. Unit - ns - ns - ns - ns
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STH170N8F7-2
Electrical characteristics
Table 8. Source-drain diode
Symbol
Parameter
Test conditions
ISD ISDM(1) VSD(2)
Source-drain current Source-drain current (pulsed) Forward on voltage
ISD = 120 A, VGS=0
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 120 A, di/dt = 100 A/µs,
VDD= 64 V, Tj=150 °C
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
- 120 A
- 480 A
- 1.2 V
- 54
ns
- 78
nC
- 2.9
A
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Electrical characteristics
STH170N8F7-2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
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Figure 3. Thermal impedance
K δ=0.5
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PV PV
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Figure 4. Output characteristics
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Figure 6. Gate charge vs gate-source voltage
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