SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVE...
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING
REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES Excellent Switching Times : ton=1.6 S(Max.), tf=0.7 S(Max.), at IC=5A High Collector Voltage : VCBO=700V.
MJE13007
TRIPLE DIFFUSED
NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC Pulse
IC ICP
Base Current Collector Power Dissipation
(Tc=25 ) Junction Temperature
IB PC Tj
Storage Temperature Range
Tstg
RATING 700 400 9 8 16 4
80
150 -55 150
UNIT V V V
A
A W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency
IEBO VEB=9V, IC=0
hFE(1) (Note) VCE=5V, IC=2A
hFE(2)
VCE=5V, IC=5A
IC=2A, IB=0.4A
VCE(sat)
IC=5A, IB=1A
IC=8A, IB=2A
VBE(sat)
IC=2A, IB=0.4A IC=5A, IB=1A
Cob VCB=10V, f=0.1MHz, IE=0
fT VCE=10V, IC=0.5A
Turn-On Time Storage Time Fall Time
ton 300µS
OUTPUT
IB1 INPUT
25Ω
tstg
IB1 IB2 IB2
tf
IB1=IB2 =1A DUTY CYCLE <= 2%
VCC =125V
Note : hFE Classification R:15 27, O:23 39
MIN. 15 10 4
TYP. -
110 -
MAX. 1 39 1 2 3 1.5 1.6 -
UNIT mA
V
V pF MHz
-
- 1.6
S
--3 S
-
- 0.7
S
2008. 3. 26
Revision No : 1
1/2
MJE13007
2008. 3. 26
Revision No : 1
2/2
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