MJE13003HV

SEMICONDUCTOR TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A High Collector Voltage : VCBO=900V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current SYMBOL VCBO VCEO VEBO IC ICP IB RATING 900 530 9 1.5 3 0.75 UNIT V V V A A Collector Power Dissipation (Tc=25 ) PC 20 W Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 MJE13003HV TRIPLE DIFFUSED NPN TRANSISTOR A B C H J K D E F G L M O NP 12 3 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 Φ3.2+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX 1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.50+_ 0.5 2.3 +_ 0.1 0.65 +_ 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency Turn-On Time SYMBOL IEBO hFE(1) *hFE(2) hFE(3) VCE(sat) VBE(sat) Cob fT ton Storage Time tstg Fall Time tf *Note : hFE Classification R:20 35, O:25 40 TEST CONDITION VEB=9V, IC=0 VCE=10V, IC=10 A VCE=10V, IC=0.4A VCE=10V, IC=1A IC=0.5A, IB=0.1A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1A, IB=0.25A VCB=10V, f=0.1MHz, IE=0 VCE=10V, IC=0.1A 300µS IB1 IB1 INPUT IB2 IB2 IB1=IB2 =0.2A DUTY CYCLE <= 2...