KTX103E

SEMICONDUCTOR TECHNICAL DATA KTX103E EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Including two devices in TES6. (Thin Extreme Super mini type with 6 pin.) Simplify circuit design. Reduce a quantity of parts and manufacturing process. EQUIVALENT CIRCUIT (TOP VIEW) Marking Q1 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Q1 , Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. 2008. 9. 23 Revision No : 2 SYMBOL VCBO VCEO VEBO IC SYMBOL VCBO VCEO VEBO IC SYMBOL PC * Tj Tstg RATING 15 12 6 500 RATING -15 -12 -6 -500 RATING 200 150 -55 150 UNIT V V V UNIT V V V UNIT 1/4 KTX103E Q1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage ICBO V(BR)CBO V(BR)CEO VCB=15V, IE=0 IE=10 A IC=1mA Emitter-Base Breakdown Voltage DC Current Gain V(BR)EBO hFE IE=10 A VCE=2V, IC=10mA Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA Transition Frequency fT VCE=2V, IC=10mA, fT=100MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz MIN. 15 12 6 270 - TYP. 90 320 7.5 MAX. 100 680 250 - UNIT nA V V V mV MHz pF Q2 ELECTRICA...