KTC4080E

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES Small Reverse Transfer Capacitance : Cre=0.7pF(Typ.) Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). KTC4080E EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING 40 30 4 20 -20 100 150 -55 150 UNIT V V V mA mA mW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Collector-Base Time Constant Noise Figure Power Gain ICBO IEBO hFE(Note) Cre fT CC rbb’ NF Gpe VCB=18V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, f=1MHz VCE=6V, IC=1mA VCB=6V, IE=-1mA, f=30MHz VCC=6V, IE=-1mA f=100MHz (Fig.) Note : hFE Classification R(1):40 80 , O(2):70 140 , Y(4):100 200 2014. 3. 31 Revision No : 2 MIN. 40 - 300 15 TYP. 0.7 550 2.5 18 MAX. 0.5 0.5 200 30 5.0 - UNIT A A pF MHz pS dB 1/6 Fig. Gpe TEST CIRCUIT KTC4080E y PARAMETERS (Typ.) (1) COMMON EMITTER (VCE=6V, IE=-1mA, f=100MHz) CHARACTERISTIC Input Conductance Input Capacitance Reverse Transfer Admittance Phase Angle of Reverse Transfer Admittance Forward Transfer Admittance Phase Angle of Forward Transfer Admittance Output Condu...