KTC4077

SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=120V. Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE: hFE=200 700. Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTA2017. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current IB Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 120 120 5 100 20 100 150 -55 150 UNIT V V V mA mA mW KTC4077 EPITAXIAL PLANAR NPN TRANSISTOR A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. EMITTER 2. BASE 3. COLLECTOR USM Marking hFE Rank Type Name D Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=120V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 DC Current Gain hFE (Note) VCE=6V, IC=2mA Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA Transition Frequency fT VCE=6V, IC=1mA Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Noise Figure VCE=6V, IC=0.1mA NF f=1kHz, Rg=10k Note : hFE Classification GR(6):200 400 BL(8):350 700 2008. 8. 29 Revision No : 3 MIN. - 200 - TYP. - 100 4.0 MAX. 0.1 0.1 700 0.3 - UNIT A A V MH...