KTC3770S

SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB (f=1GHz). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Range Tstg RATING 20 12 3 100 150 150 -55 150 UNIT V V V mA mW KTC3770S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking hFE Rank RType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Output Capacitance Reverse Transfer Capacitance Transition Frequency Insertion Gain ICBO IEBO hFE (Note1) Cob Cre fT |S21e|2 VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC=20mA VCB=10V, IE=0, f=1MHz (Note2) VCE=10V, IC=20mA VCE=10V, IC=20mA, f=1GHz Noise Figure NF VCE=10V, IC=7mA, f=1GHz Note 1 : hFE Classification A:50~100, B:80~160, C:125~250. Note 2 : Cre is measured by 3 terminal method with capacitance bridge. MIN. 50 5 7.5 - TYP. - 0.65 7 11.5 1.1 MAX. 1 1 250 1.0 1.15 2 UNIT A A pF pF GHz dB dB 2003. 2. 12 Revision No : 1 1/5...