KTC3631D

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING. FEATURES Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) at (IC=0.5A). High Switching Speed Typically. : tf 0.4 S at IC=1A. Complementary to KTA1862D. Wide Safe Operating Area (SOA) KTC3631D/L TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse VCBO VCEO VEBO IC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range PC Tj Tstg RATING 400 400 7 2.0 4.0 1.0 10 150 -55 150 UNIT V V V A W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Saturation Voltage Base Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE(1) (Note) hFE(2) VCE(sat) VBE(sat) fT Cob TEST CONDITION VCB=400V, IE=0 VEB=5.0V, IC=0 VCE=5.0V, IC=100mA VCE=5.0V, IC=500mA IC=500mA, IB=100mA IC=500mA, IB=100mA VCE=10V, IE=-100mA, f=5MHz VCB=10V, IE=0, f=1MHz Turn-on Time ton Switching Time Storage Time tstg Fall Time tf Note : hFE(1) Classification O:56 120 , Y:82 180 2003. 3. 27 Revision No : 4 MIN. 56 6 - TYP. - 100 0.3 18 30 MAX. 1.0 1.0 180 0.5 1.2 - UNIT A A V V MHz pF - 0.2 - - 1.8 - S - 0.4 - 1/3 KTC3631D/L 2003. 3. 27 Revision No : 4 2/3 KTC3631D/L 2003. 3. 27 Revision No : 4 3/3 ...