IRF7406TRPBF-1

VDS RDS(on) max (@VGS = -10V) Qg (max) ID (@TA = 25°C) -30 0.045 59 -5.8 V Ω nC A IRF7406TRPbF-1 HEXFET® Power MOSFET S1 S2 S3 G4 8 A D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7406PbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7406TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec. Pulsed Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient„ Max. -6.7 -5.8 -3.7 -23 2.5 0.02 ± 20 -5.0 -55 to + 150 Units A W W/°C V V/ns °C Typ. ––– Max. 50 Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7406TRPbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Th...