Power MOSFET
VDS RDS(on) max
(@VGS = 4.5V)
Qg ID
(@TA = 25°C)
20 0.022
48 8.7
V Ω nC A
IRF7401PbF-1
HEXFET® Power MOSFET
S1 S2 S...
Description
VDS RDS(on) max
(@VGS = 4.5V)
Qg ID
(@TA = 25°C)
20 0.022
48 8.7
V Ω nC A
IRF7401PbF-1
HEXFET® Power MOSFET
S1 S2 S3 G4
AA 8D 7D 6D 5D
Top View
SO-8
Features Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF7401PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7401PbF-1 IRF7401TRPbF-1
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C
VGS dv/dt TJ, TSTG
Parameter 10 Sec. Pulsed Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJA
Parameter Maximum Junction-to-Ambient
Max. 10 8.7 7.0 35 2.5 0.02 ± 12 5.0
-55 to + 150
Units
A
W W/°C
V V/ns
°C
Typ.
Max. 50
Units °C/W
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 18, 2013
IRF7401PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th) gf...
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