SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA
KTC5027
TRIPLE DIFFUSED N...
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA
KTC5027
TRIPLE DIFFUSED
NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC Pulse
IC ICP
Base Current Collector Power Dissipation
(Tc=25 ) Junction Temperature
IB PC Tj
Storage Temperature Range
Tstg
RATING 1100 800 7 3 10 1.5
50
150 -55 150
UNIT V V V
A
A W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current
Collector-Emitter Sustaning Voltage
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
DC Current Gain
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Output Capacitance Transition Frequency
ICBO IEBO
VCEX(SUS)
VCE(sat) VBE(sat) hFE (1) (Note) hFE (2) BVCBO BVCEO BVEBO
Cob fT
VCB=800V, IE=0 VEB=5V, IC=0 IC=1.5A, IB1=-IB2=0.3A L=2mH, Clamped IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=5V, IC=0.2A VCE=5V, IC=1A IC=1mA, IE=0 IC=5mA, RBE= IE=1mA, IC=0 VCB=10V, f=1MHz, IE=0 VCE=10V, IC=0.2A
Turn On Time
ton
Switching Time
Storage Time
tstg
Fall Time
tf
Note : hFE (1) Classification R:15 30, O:20 40
2008. 3. 26
Revision No : 1
MIN. -
TYP. -
MAX. 10 10
UNIT A A
800 - - V
15 8 1100 800 7 -
60 15
2V 1.5 V 40 -V -V -V - pF - MHz
- - 0.5
--3 S
- - 0.3
1/3
KTC5027
2008. 3. 26
Revision ...