KDR357

SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF(3)=0.43V(Typ.) Low Reverse Current : IR=5 (Max.) Small Package : USC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VRM 45 V VR 40 V IFM 200 mA IO 100 mA IFSM 1A PD 200* mW Tj 125 Storage Temperature Range Tstg -55 125 * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. KDR357 SCHOTTKY BARRIER TYPE DIODE CATHODE MARK E A K F L B 1 2 D MM 1. ANODE 2. CATHODE G H J C I DIM MILLIMETERS A 2.50+_ 0.2 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30 +_ 0.06 E 1.70 +_ 0.05 F 0.27 +_ 0.10 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4 L 2 +4/-2 M 4~6 USC Marking Type Name UL Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current IR Total Capacitance CT TEST CONDITION IF=1mA IF=10mA IF=100mA VR=40V VR=0V, f=1MHz MIN. - TYP. 0.24 0.31 0.43 30 MAX. - 0.55 5 - UNIT V A pF 2014. 3. 31 Revision No : 6 1/2 FORWARD CURRENT IF (mA) KDR357 IF - VF 100 Ta=75 C Ta=125 C 10 Ta=25 C 1 0 0.1 0.2 0.3 0.4 FORWARD VOLTAGE VF (V) 0.5 30 25 20 15 10 5 0 0 CT - VR f=1MHz Ta=25 C 10 20 30 40 REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (uA) 1,000.0 100.0 10.0 IR - VR Ta=125 C Ta=75 C 1.0 0.1 0 Ta=25 C...