SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Very Small Packa...
SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Very Small Package : VSM.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range * : Unit Rating. Total Rating=Unit Rating 1.5
VRM VR IFM IO IFSM PD Tj Tstg Topr
RATING 15 10
100 * 50 * 1* 100 125 -55 125 -40 100
UNIT V V mA mA A mW
A G H
KDR331V
SCHOTTKY BARRIER TYPE DIODE
K
E B
2 13
PP
1. ANODE 1 2. ANODE 2 3. CATHODE
JD
DIM A B C D E G H J K P
MILLIMETERS 1.2 +_0.05 0.8 +_0.05 0.5 +_ 0.05 0.3 +_ 0.05 1.2 +_ 0.05 0.8 +_ 0.05
0.40 0.12+_ 0.05 0.2 +_ 0.05
5
3
21
VSM
C
Marking
Type Name
UW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage Reverse Current
VF(1) VF(2) VF(3)
IR
Total Capacitance
CT
TEST CONDITION IF=1mA IF=5mA IF=50mA VR=10V VR=0V, f=1MHz
MIN. -
TYP. 0.21 0.25 0.35
13
MAX. -
0.30 0.50 20 40
UNIT
V
A pF
2001. 7. 25
Revision No : 0
1/2
FORWARD CURRENT IF (mA)
KDR331V
IF - VF
1 Ta=23 C
0.1
0.01 0
100 200 300 400
FORWARD VOLTAGE VF (mV)
500
14 12 10 8 6 4 2 0
0.01
CT - VR
0.1 1
10 20
REVERSE VOLTAGE VR (V)
POWER DISSIPATION P (mW)
REVERSE CURRENT IR (A)
10 Ta=23 C
IR - VR
1
0.1
0.01 0
2 4 6 8 10
REVERSE VOLTAGE VR (V)
12
120 100
80 60 40 20
0 0
P - Ta
25 50 75 100 125 AMBIENT TEMP...